amplifiers - chip 1 1 - 238 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC594 gaas phemt mmic low noise amplifier, 2 - 4 ghz v00.0407 general description features functional diagram the HMC594 is a gaas phemt mmic low noise amplifi er (lna) chip which operates from 2 to 4 ghz. the HMC594 features extremely fl at performance characteristics including 10 db of small signal gain, 2.6 db of noise fi gure and output ip3 of +36 dbm across the operating band. this versatile lna is ideal for hybrid and mcm assemblies due to its compact size, consistent output power and dc blocked rf i/os. all data is measured with the chip in a 50 ohm test fi xture connected via one 0.025 mm (1 mil) diameter bondwire of minimal length 0.31 mm (12 mil). gain flatness: 0.2 db noise figure: 2.6 db gain: 10 db oip3: +36 dbm dc supply: +6v @ 100 ma 50 ohm matched input/output die size: 1.32 x 1.21 x 0.10 mm electrical specifications, t a = +25 c, vdd= +6v, idd= 100ma* typical applications the HMC594 is ideal for: ? fixed microwave ? point-to-multi-point radios ? test & measurement equipment ? radar & sensors ? military & space parameter min. typ. max. units frequency range 2 - 4 ghz gain 710 db gain variation over temperature 0.015 db/ c noise figure 2.6 3.5 db input return loss 15 db output return loss 15 db output power for 1 db compression (p1db) 18 21 dbm saturated output power (psat) 22 dbm output third order intercept (ip3) 36 dbm supply current (idd) 100 130 ma *adjust vgg between -1.5v to -0.5v to achieve idd = 100ma
amplifiers - chip 1 1 - 239 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature noise figure vs. temperature HMC594 gaas phemt mmic low noise amplifier, 2 - 4 ghz v00.0407 reverse isolation vs. temperature -30 -25 -20 -15 -10 -5 0 5 10 15 123456789 s21 s11 s22 response (dbm) frequency (ghz) 5 6 7 8 9 10 11 12 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 +25c +85c -55c gain (db) frequency (ghz) -25 -20 -15 -10 -5 0 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 +25c +85c -55c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 +25c +85c -55c return loss (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 +25c +85c -55c noise figure (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 +25c +85c -55c isolation (db) frequency (ghz)
amplifiers - chip 1 1 - 240 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com p1db vs. temperature power compression @ 3 ghz psat vs. temperature gain, noise figure & power vs. supply voltage @ 3 ghz HMC594 gaas phemt mmic low noise amplifier, 2 - 4 ghz v00.0407 output ip3 vs. temperature 16 17 18 19 20 21 22 23 24 25 26 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 +25c +85c -40c p1db (dbm) frequency (ghz) 16 17 18 19 20 21 22 23 24 25 26 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 +25c +85c -40c psat (dbm) frequency (ghz) 20 22 24 26 28 30 32 34 36 38 40 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 +25c +85c -40c oip3 (dbm) frequency (ghz) 0 5 10 15 20 25 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 5 10 15 20 25 30 35 40 5.5 6 6.5 gain p1db psat oip3 gain (db), p1db (dbm), psat (dbm), oip3 (dbm) vdd supply voltage (vdc)
amplifiers - chip 1 1 - 241 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing absolute maximum ratings drain bias voltage (vdd) +7 vdc rf input power (rfin)(vdd = +6.0 vdc) +15 dbm channel temperature 175 c continuous pdiss (t= 85 c) (derate 11.7 mw/c above 85 c) 0.76 w thermal resistance (channel to die bottom) 85 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c vdd (vdc) idd (ma) +5.5 97 +6.0 100 +6.5 103 typical supply current vs. vdd note: amplifier will operate over full voltage ranges shown above. notes: 1. all dimensions are in inches [mm] 2. die thickness is .004 3. typical bond is .004 square 4. backside metallization: gold 5. bond pad metallization: gold 6. backside metal is ground. 7. connection not required for unlabeled bond pads. electrostatic sensitive device observe handling precautions die packaging information [1] standard alternate gp-1 [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. HMC594 gaas phemt mmic low noise amplifier, 2 - 4 ghz v00.0407
amplifiers - chip 1 1 - 242 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad descriptions pad number function description interface schematic 1, 3, 4, 6 die bottom gnd this pad and die bottom must be connected to rf/dc ground. 2rfin this pad is ac coupled and matched to 50 ohms from 2 - 4 ghz. 5vdd power supply voltage for the amplifi er. external bypass capacitors of 100 pf and 0.1 f are required. 7rfout this pad is ac coupled and matched to 50 ohms from 2 - 4 ghz. 8vgg gate supply voltage for the amplifi er. external bypass capacitors of 100 pf and 0.1 f are required. assembly diagram HMC594 gaas phemt mmic low noise amplifier, 2 - 4 ghz v00.0407
amplifiers - chip 1 1 - 243 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm (3 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffl e or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against > 250v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fl a t . eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated o n the package or substrate. all bonds should be as short as possible <0.31 mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab HMC594 gaas phemt mmic low noise amplifier, 2 - 4 ghz v00.0407
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